d a t a sh eet product data sheet supersedes data of 2001 aug 10 2001 nov 07 discrete semiconductors bc857bv pnp general purpose double transistor m3d74 4
2001 nov 07 2 nxp semiconductors product data sheet pnp general purpose double transistor bc857bv features ? 300 mw total power dissipation ? very small 1.6 mm 1.2 mm 0.55 mm ultra thin package ? excellent coplanarity due to straight leads ? improved thermal behaviour due to flat leads ? reduces number of components as replacement of two sc-75/sc-89 packaged biss transistors ? reduces required board space ? reduces pick and place costs. applications ? general purpose switching and amplification. description pnp double transistor in a sot666 plastic package. npn complement: bc847bv. marking pinning type number marking code bc857bv 3f pin description 1, 4 emitter tr1; tr2 2, 5 base tr1; tr2 6, 3 collector tr1; tr2 mam450 13 2 tr1 tr2 6 4 5 123 4 6 5 top view fig.1 simplified outline (sot666) and symbol.
2001 nov 07 3 nxp semico nductors product data sheet pnp general purpose doubl e transistor bc857bv limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. transistor mounted on an fr4 printed-circuit board. thermal characteristics notes 1. transistor mounted on an fr4 printed-circuit board. 2. the only recommended soldering method is reflow soldering. symbol parameter conditions min. max. unit per transistor v cbo collector-base voltage open emitter ? ? 50 v v ceo collector-emitter voltage open base ? ? 45 v v ebo emitter-base voltage open collector ? ? 5 v i c collector current (dc) ? ? 100 ma i cm peak collector current ? ? 200 ma i bm peak base current ? ? 200 ma p tot total power dissipation t amb 25 c; note 1 ? 200 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c per device p tot total power dissipation t amb 25 c; note 1 ? 300 mw symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient notes 1 and 2 416 k/w
2001 nov 07 4 nxp semico nductors product data sheet pnp general purpose doubl e transistor bc857bv characteristics t amb = 25 c; unless otherw ise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions min. typ. max. unit per transistor i cbo collector-base cut-off current i e = 0; v cb = ? 30 v ? ? ? 15 na i e = 0; v cb = ? 30 v; t j = 150 c ? ? ? 5 a i ebo emitter-base cut-off current i c = 0; v eb = ? 5 v ? ? ? 100 na h fe dc current gain i c = ? 2 ma; v ce = ? 5 v 200 ? 450 v be base-emitter voltage i c = ? 2 ma; v ce = ? 5 v ? 600 ? 655 ? 750 mv v cesat collector-emitte r saturation voltage i c = ? 10 ma; i b = ? 0.5 ma ? ? ? 100 mv i c = ? 100 ma; i b = ? 5. ma; note 1 ? ? ? 400 mv v besat base-emitter saturation voltage i c = ? 10 ma; i b = ? 0.5 ma ? ? 755 ? mv c c collector capacitance i e = i e = 0; v cb = ? 10 v; f = 1 mhz ? ? 2.2 pf c e emitter capacitance i c = i c = 0; v eb = ? 500 mv; f = 1 mhz ? 10 ? pf f t transition frequency i c = ? 10 ma; v ce = ? 5 v; f = 100 mhz 100 ? ? mhz
2001 nov 07 5 nxp semico nductors product data sheet pnp general purpose doubl e transistor bc857bv graphical inform ation bc857bv handbook, halfpage 0 1000 200 400 600 800 mhb975 ? 10 ? 2 ? 10 ? 1 110 i c (ma) h fe 10 2 10 3 (1) (2) (3) fig.2 dc current gain; typical values. v ce = ? 5 v. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage ? 0 ? 1200 ? 1000 ? 400 ? 200 ? 800 ? 600 mhb976 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 v be (mv) i c (ma) ? 10 2 ? 10 3 (1) (2) (3) fig.3 base-emitter voltage as a function of collector current; typical values. v ce = ? 5 v. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 150 c. handbook, halfpage ? 10 4 ? 10 3 ? 10 2 ? 10 mhb977 ? 10 ? 1 ? 1 ? 10 v cesat (mv) i c (ma) ? 10 2 ? 10 3 (1) (2) (3) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage 0 ? 1200 ? 1000 ? 400 ? 200 ? 800 ? 600 mhb978 ? 10 ? 1 ? 1 ? 10 v besat (mv) i c (ma) ? 10 2 ? 10 3 (1) (2) (3) fig.5 base-emitter saturation voltage as a function of collector current; typical values. i c /i b 20. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 150 c.
2001 nov 07 6 nxp semico nductors product data sheet pnp general purpose doubl e transistor bc857bv package outline unit b p cd e e 1 h e l p w references outline version european projection issue date 01-01-04 01-08-27 iec jedec eiaj mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface mounted package; 6 leads sot66 6 ys w m a
2001 nov 07 7 nxp semico nductors product data sheet pnp general purpose doubl e transistor bc857bv data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 613514/02/pp8 date of release: 2001 nov 07 document order number: 9397 750 09041
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